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AO7417 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7417/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.5V, in the small SOT363 footprint. This device is suitable for use in buck convertor. AO7417 and AO7417L are electrically identical. -RoHS Compliant -AO7417L is Halogen Free
Features
VDS (V) = -20V (VGS = -4.5V) ID = -2 A RDS(ON) < 80m (VGS = -4.5V) RDS(ON) < 100m (VGS = -2.5V) RDS(ON) < 125m (VGS = -1.8V) RDS(ON) < 150m (VGS = -1.5V)
SC-70-6 (SOT-363) Top View D D G 16 25 34 D D S
D
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
10 Sec -20 8 -2
Steady State
Units V V
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
-1.9 -1.6 -20 0.57 0.36 -55 to 150 A
-1.7 0.63 0.4
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C
Symbol
A A
t 10s Steady-State Steady-State
RJA RJL
Typ 160 180 130
Max 200 220 160
Units C/W C/W C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO7417
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-20V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-2A TJ=125C RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-1.8A VGS=-1.8V, ID=-1.5A VGS=-1.5V, ID=-0.5A gFS VSD IS Forward Transconductance VDS=-5V, ID=-2A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.5 -20 65 90 80 100 115 10 -0.7 -1 -1 560 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 80 70 15 8.5 VGS=-4.5V, VDS=-10V, ID=-2A 1.2 2.1 7.2 VGS=-4.5V, VDS=-10V, RL=5, RGEN=6 IF=-2A, dI/dt=100A/s 36 53 56 37 27 49 23 11 745 80 110 100 125 150 -0.65 Min -20 -1 -5 100 -1 Typ Max Units V A nA V A m m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-2A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 300 s pulse width, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev0: May 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev1:Aug 2005
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO7417
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20 -4.5V 16 -2.5V -ID (A) 12 -ID(A) -2V 8 6 4 125C 2 25C 0 0.5 1 1.5 2 2.5 -VGS(Volts) Figure 2: Transfer Characteristics -3V 10 12
8
VGS=4.5V, ID=1.8A
4
VGS VGS=-1.5V =2.5V, ID=1.7A
0 0 1 2 3
VGS=1.8V, ID=1A
4 5 VGS=1.5V, ID=1A
-VDS (Volts) Fig 1: On-Region Characteristics
140 130 120 RDS(ON) (m) 110 100 90 80 70 60 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 ID=-2A 170 VGS=-4.5V VGS=-2.5V VGS=-1.5V VGS=-1.8V Normalized On-Resistance
1.5 1.4 1.3 1.2 1.1 1 0.9 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 0 25 VGS=-1.8V ID=-1.5A VGS=-1.5V ID=-0.5A VGS=-4.5V ID=-2A
10
1
RDS(ON) (m)
-IS (A)
140
0.1
125C 25C
110
125C
0.01
80 25C 50 1 2 3 4 5 6 7 8
0.001
0.0001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics
-VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO7417
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 VDS=-4.5V ID=-2A VDS=10V ID=2.2A Capacitance (pF)
1400
4 -VGS (Volts)
1200
1000
3
800
Ciss
600
2
VGS=4.5V, ID=1.8A
1
400
VGS=2.5V, ID=1.7A
0 0 2 4
200
Coss Crss
0 5 10 15 20
VGS=1.8V, ID=1A
6 8 VGS=1.5V, ID=1A 10 Qg (nC) Figure 7: Gate-Charge Characteristics
0
-VDS (Volts) Figure 8: Capacitance Characteristics
100.0 10s 10.0 -ID (Amps) Power (W) RDS(ON) limited 100s 1.0 1ms 10ms 100ms 1s 10s 100
100
TJ(Max)=150C TA=25C
10
1
0.1 TJ(Max)=150C TA=25C 0.1 1 DC 10
0.0
0.1 0.0001
0.001
0.01
0.1
1
10
100
-VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
1
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=220C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Ton
T 100 1000
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
www.aosmd.com

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